|
gptkbp:instanceOf
|
gptkb:SDRAM
|
|
gptkbp:alternativeTo
|
2D NAND memory
|
|
gptkbp:announced
|
2013
|
|
gptkbp:application
|
gptkb:consumer_electronics
data centers
mobile devices
enterprise storage
|
|
gptkbp:cellType
|
gptkb:QLC
gptkb:MLC
gptkb:SLC
gptkb:TLC
|
|
gptkbp:contrastsWith
|
planar NAND memory
|
|
gptkbp:developedBy
|
gptkb:Intel
gptkb:Samsung_Electronics
gptkb:Toshiba
gptkb:Micron_Technology
gptkb:SK_Hynix
|
|
gptkbp:enables
|
lower power consumption
faster data transfer rates
larger capacity SSDs
|
|
gptkbp:feature
|
lower cost per bit
higher storage density
improved endurance
stacked memory cells
vertical cell structure
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
3D NAND memory
|
|
gptkbp:level
|
up to 200+
|
|
gptkbp:marketedAs
|
Intel 3D NAND
Micron 3D NAND
SK Hynix 3D NAND
Samsung V-NAND
Toshiba BiCS FLASH
|
|
gptkbp:patent
|
gptkb:Samsung_Electronics
gptkb:Toshiba
|
|
gptkbp:technology
|
measured in nanometers
|
|
gptkbp:usedIn
|
solid-state drives
USB flash drives
memory cards
|
|
gptkbp:bfsParent
|
gptkb:Intel_Dalian_NAND_memory_manufacturing_facility
|
|
gptkbp:bfsLayer
|
7
|