Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:memory_technology
|
| gptkbp:advantage |
lower power consumption
SRAM-like speed higher density |
| gptkbp:application |
gptkb:industrial_equipment
embedded systems video game consoles |
| gptkbp:cellType |
single-transistor memory cell
|
| gptkbp:contrastsWith |
conventional SRAM
|
| gptkbp:developedBy |
gptkb:MoSys
|
| gptkbp:introducedIn |
2000
|
| gptkbp:marketedAs |
SRAM replacement
|
| gptkbp:notableFeature |
integrated refresh circuitry
no refresh required by user |
| gptkbp:patent |
gptkb:MoSys
|
| gptkbp:type |
pseudo-static RAM
|
| gptkbp:usedIn |
gptkb:Nintendo_DS
gptkb:Nintendo_GameCube gptkb:Nintendo_Wii |
| gptkbp:uses |
DRAM process technology
|
| gptkbp:bfsParent |
gptkb:ATI_Flipper
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
1T-SRAM
|