Triple
T8052613
| Position | Surface form | Disambiguated ID | Type / Status |
|---|---|---|---|
| Subject | Reona Esaki |
E187710
|
entity |
| Predicate | knownFor |
P22
|
FINISHED |
| Object | Esaki diode |
E186747
|
NE FINISHED |
How this triple was built (2 steps)
Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.
NER
Named-entity recognition
gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: Esaki diode | Statement: [Reona Esaki, knownFor, Esaki diode]
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: Esaki diode Context triple: [Reona Esaki, knownFor, Esaki diode]
-
A.
Esaki diode
chosen
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
B.
Gunn diode
A Gunn diode is a semiconductor device that generates microwave-frequency oscillations by exploiting the Gunn effect in materials like gallium arsenide, commonly used in high-frequency oscillators and radar systems.
-
C.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
D.
resonant tunneling diode
A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
-
E.
gallium arsenide
Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
- F. None of above.
- G. Unsure - the case is ambiguous/there is not enough information to decide.
Provenance (3 batches)
The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.
| Step | Stage | Batch ID | Status | When |
|---|---|---|---|---|
| creating | Elicitation | batch_69ca82b15e948190a62fd7af5218426a |
completed | March 30, 2026, 2:03 p.m. |
| NER | Named-entity recognition | batch_69cb3f7c425c8190aa1b2f534afeb58c |
completed | March 31, 2026, 3:29 a.m. |
| NED1 | Entity disambiguation (via context triple) | batch_69cc93cc0cec8190834e4c24f6d03a99 |
completed | April 1, 2026, 3:41 a.m. |
Created at: March 30, 2026, 5:25 p.m.