Triple
T8021292
| Position | Surface form | Disambiguated ID | Type / Status |
|---|---|---|---|
| Subject | Esaki Reona |
E186746
|
entity |
| Predicate | knownFor |
P22
|
FINISHED |
| Object | Esaki diode |
E186747
|
NE FINISHED |
How this triple was built (2 steps)
Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.
NER
Named-entity recognition
gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: Esaki diode | Statement: [Esaki Reona, knownFor, Esaki diode]
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: Esaki diode Context triple: [Esaki Reona, knownFor, Esaki diode]
-
A.
Esaki diode
chosen
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
B.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
C.
gallium arsenide
Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
-
D.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
E.
Nernst–Lamp
The Nernst–Lamp is an early type of electric lamp that used a heated ceramic rod as a light-emitting element and played a significant role in the development of incandescent lighting technology.
- F. None of above.
- G. Unsure - the case is ambiguous/there is not enough information to decide.
Provenance (3 batches)
The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.
| Step | Stage | Batch ID | Status | When |
|---|---|---|---|---|
| creating | Elicitation | batch_69ca82ac7fc081909b1398cf025423af |
completed | March 30, 2026, 2:03 p.m. |
| NER | Named-entity recognition | batch_69cb3e8d90488190b57d1e748e272061 |
completed | March 31, 2026, 3:25 a.m. |
| NED1 | Entity disambiguation (via context triple) | batch_69cc56c82824819082e93eddc40bfad1 |
completed | March 31, 2026, 11:20 p.m. |
Created at: March 30, 2026, 5:20 p.m.