Triple

T2979607
Position Surface form Disambiguated ID Type / Status
Subject ON Semiconductor E80478 entity
Predicate product P490 FINISHED
Object MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
 E317284 NE FINISHED

How this triple was built (4 steps)

Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.

NER Named-entity recognition gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: MOSFETs | Statement: [ON Semiconductor, product, MOSFETs]
NED1 Entity disambiguation (via context triple) gpt-5-mini-2025-08-07 
Target entity: MOSFETs
Context triple: [ON Semiconductor, product, MOSFETs]
  • A. MMICs
    MMICs (Monolithic Microwave Integrated Circuits) are compact, high-frequency integrated circuits used in microwave and millimeter-wave applications such as radar, satellite communications, and wireless systems.
  • B. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • C. BJT
    BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
  • D. FET
    FET (Further-eastern European Time) is a time zone used in parts of Eastern Europe and Western Russia, typically corresponding to UTC+3.
  • E. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • F. None of above. chosen
  • G. Unsure - the case is ambiguous/there is not enough information to decide.
NEDg Description generation gpt-5.1
Instruction
Generate a one-sentence description of the target entity. 
You are given a context triple in the form (subject, predicate, object), where the object is the target entity. 
# Instructions
Use the triple to infer relevant information about the entity. Describe the entity based on what is most defining, well-known. 
Avoid repeating the information from the triple, unless really essential.
# Response Format
Return only the sentence: "Description: [one-sentence description of the target entity]"
Input
Entity: MOSFETs
Triple: [ON Semiconductor, product, MOSFETs]
Generated description
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
NED2 Entity disambiguation (via description) gpt-5-mini-2025-08-07 
Target entity: MOSFETs
Target entity description: MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
  • A. MMICs
    MMICs (Monolithic Microwave Integrated Circuits) are compact, high-frequency integrated circuits used in microwave and millimeter-wave applications such as radar, satellite communications, and wireless systems.
  • B. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • C. BJT
    BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
  • D. FET
    FET (Further-eastern European Time) is a time zone used in parts of Eastern Europe and Western Russia, typically corresponding to UTC+3.
  • E. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • F. None of above. chosen

Provenance (5 batches)

The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.

Step Stage Batch ID Status When
creating Elicitation batch_69ad8b15f6ac8190be5fd16a33edcb4f completed March 8, 2026, 2:43 p.m.
NER Named-entity recognition batch_69ad999cca40819082e2d6d10bdb7872 completed March 8, 2026, 3:45 p.m.
NED1 Entity disambiguation (via context triple) batch_69b108ef607c8190865b079beb1b6da5 completed March 11, 2026, 6:17 a.m.
NEDg Description generation batch_69b10bc71c708190b1e620d41278c3e0 completed March 11, 2026, 6:29 a.m.
NED2 Entity disambiguation (via description) batch_69b10c43a7c48190b63a7b3f0f180d44 completed March 11, 2026, 6:31 a.m.
Created at: March 8, 2026, 2:58 p.m.