Triple
T1653535
| Position | Surface form | Disambiguated ID | Type / Status |
|---|---|---|---|
| Subject | Leo Esaki |
E35746
|
entity |
| Predicate | knownFor |
P22
|
FINISHED |
| Object |
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
|
E186747
|
NE FINISHED |
How this triple was built (4 steps)
Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.
NER
Named-entity recognition
gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: Esaki diode | Statement: [Leo Esaki, knownFor, Esaki diode]
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: Esaki diode Context triple: [Leo Esaki, knownFor, Esaki diode]
-
A.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
B.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
C.
Nernst–Lamp
The Nernst–Lamp is an early type of electric lamp that used a heated ceramic rod as a light-emitting element and played a significant role in the development of incandescent lighting technology.
-
D.
Shockley Semiconductor Laboratory
Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
-
E.
BJT
BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
- F. None of above. chosen
- G. Unsure - the case is ambiguous/there is not enough information to decide.
NEDg
Description generation
gpt-5.1
Instruction
Generate a one-sentence description of the target entity. You are given a context triple in the form (subject, predicate, object), where the object is the target entity. # Instructions Use the triple to infer relevant information about the entity. Describe the entity based on what is most defining, well-known. Avoid repeating the information from the triple, unless really essential. # Response Format Return only the sentence: "Description: [one-sentence description of the target entity]"
Input
Entity: Esaki diode Triple: [Leo Esaki, knownFor, Esaki diode]
Generated description
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
NED2
Entity disambiguation (via description)
gpt-5-mini-2025-08-07
Target entity: Esaki diode Target entity description: The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
A.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
B.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
C.
Nernst–Lamp
The Nernst–Lamp is an early type of electric lamp that used a heated ceramic rod as a light-emitting element and played a significant role in the development of incandescent lighting technology.
-
D.
Shockley Semiconductor Laboratory
Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
-
E.
BJT
BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
- F. None of above. chosen
Provenance (5 batches)
The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.
| Step | Stage | Batch ID | Status | When |
|---|---|---|---|---|
| creating | Elicitation | batch_69a8860568888190a32cd9f70acbba42 |
completed | March 4, 2026, 7:20 p.m. |
| NER | Named-entity recognition | batch_69a90a8a080c8190b6913d6830d74526 |
completed | March 5, 2026, 4:46 a.m. |
| NED1 | Entity disambiguation (via context triple) | batch_69ad60ac133881909222b25029096407 |
completed | March 8, 2026, 11:42 a.m. |
| NEDg | Description generation | batch_69ad613d218081909e3ed7e74dcf82fc |
completed | March 8, 2026, 11:45 a.m. |
| NED2 | Entity disambiguation (via description) | batch_69ad61b178148190a088495eb599c9cb |
completed | March 8, 2026, 11:46 a.m. |
Created at: March 4, 2026, 7:29 p.m.