Statements (58)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:chemical_compound
|
| gptkbp:appearance |
black solid
|
| gptkbp:application |
gptkb:light-emitting_diodes_(LEDs)
photovoltaic cells infrared detectors |
| gptkbp:associated_band |
1.5 e V
|
| gptkbp:average_temperature |
5.5 × 10⁻⁶ K⁻¹
|
| gptkbp:band_structure |
direct band gap
|
| gptkbp:casnumber |
12059-24-6
|
| gptkbp:characteristic |
transparent in infrared
|
| gptkbp:characterized_by |
gptkb:Raman_spectroscopy
X-ray diffraction Fourier-transform infrared spectroscopy scanning electron microscopy energy-dispersive X-ray spectroscopy transmission electron microscopy Hall effect measurement electrical resistivity measurement optical absorption measurement photoluminescence spectroscopy thermal conductivity measurement |
| gptkbp:chemical_formula |
Gd P
|
| gptkbp:color |
gptkb:black
|
| gptkbp:composed_by |
chemical vapor deposition
molecular beam epitaxy solid-state reaction reaction of gadolinium and phosphorus |
| gptkbp:cooling_system |
50 W/(m· K)
|
| gptkbp:discovery_year |
1960s
|
| gptkbp:dissolved |
insoluble in water
|
| gptkbp:electron_affinity |
0.5 e V
|
| gptkbp:electronic_configuration |
[ Xe] 4f⁷ 5d¹ 6s²
|
| gptkbp:financial_stability |
thermally stable
|
| gptkbp:has_field |
ferromagnetic
|
| https://www.w3.org/2000/01/rdf-schema#label |
gadolinium phosphide
|
| gptkbp:magnetic_moment |
7.94 μ B
|
| gptkbp:mass |
151.5 g/mol
220.43 g/mol |
| gptkbp:material |
indium phosphide
aluminum phosphide gallium phosphide |
| gptkbp:melting_point |
gptkb:unknown
1,500 ° C 1500 ° C |
| gptkbp:notable_conductors |
n-type semiconductor
|
| gptkbp:photoelectric_effect |
exhibits photoelectric effect
|
| gptkbp:population_density |
6.5 g/cm³
|
| gptkbp:previous_name |
gptkb:gadolinium_phosphide
|
| gptkbp:related_products |
gadolinium antimonide
gadolinium arsenide gadolinium nitride |
| gptkbp:structure |
cubic
zinc blende octahedral crystals |
| gptkbp:synthesis_temperature |
1,200 ° C
|
| gptkbp:thermal_stability |
stable up to 1,500 ° C
|
| gptkbp:toxicity |
low toxicity
|
| gptkbp:uses |
semiconductor applications
|