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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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07/408,174
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gptkbp:applicationPublication
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US_07/408,174_A1
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gptkbp:applicationType
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utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
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gptkbp:country
|
gptkb:United_States
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gptkbp:documentType
|
patent document
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|
gptkbp:examiner
|
gptkb:John_Doe
|
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
|
March 30, 1989
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gptkbp:grantDate
|
June 4, 1991
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|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,021,993
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gptkbp:internationalClassification
|
C30B 29/00
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:inventorCountry
|
gptkb:United_States
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gptkbp:issuedOn
|
June 4, 1991
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gptkbp:language
|
English
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gptkbp:legalStatus
|
patent granted
|
|
gptkbp:numberOfClaims
|
20
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|
gptkbp:patentCitation
|
gptkb:US_4,678,901
gptkb:US_4,123,456
gptkb:US_4,012,345
gptkb:US_4,456,789
US 4,901,234
US_4,567,890
US_4,234,567
US_4,345,678
US_4,789,012
US_4,890,123
|
|
gptkbp:patentExpiration
|
June 4, 2008
|
|
gptkbp:patentFamily
|
US_patent_family_5,021,993
|
|
gptkbp:patentNumber
|
5,021,993
|
|
gptkbp:patentType
|
granted patent
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|
gptkbp:priorityDate
|
March 30, 1989
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gptkbp:relatedTo
|
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
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gptkbp:status
|
active
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gptkbp:title
|
Method for producing a high purity silicon
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