Statements (29)
Predicate | Object |
---|---|
gptkbp:instanceOf |
patent
|
gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
gptkbp:applicationNumber |
07/408,155
|
gptkbp:applicationType |
utility
|
gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
gptkbp:citedBy |
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456 gptkb:US_patent_5,234,567 gptkb:US_patent_5,345,678 |
gptkbp:expirationDate |
June 4, 2008
|
gptkbp:fieldOfUse |
semiconductors
|
gptkbp:firstClaim |
A method for producing high purity silicon.
The method of claim 20. |
https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,021,986
|
gptkbp:internationalClassification |
H01L 21/00
C30B 29/00 |
gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
gptkbp:issuedOn |
June 4, 1991
|
gptkbp:legalStatus |
active
|
gptkbp:numberOfClaims |
20
|
gptkbp:numberOfFigures |
5
|
gptkbp:patentFamily |
US_patent_family_5,021,986.
|
gptkbp:patentOffice |
United_States_Patent_and_Trademark_Office.
|
gptkbp:patentType |
granted
|
gptkbp:priorityDate |
March 30, 1989
|
gptkbp:relatedTo |
chemical vapor deposition
high purity materials silicon production |
gptkbp:title |
Method for producing a high purity silicon
|