US patent 5,021,986

GPTKB entity

Statements (29)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationNumber 07/408,155
gptkbp:applicationType utility
gptkbp:assignee The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
gptkbp:expirationDate June 4, 2008
gptkbp:fieldOfUse semiconductors
gptkbp:firstClaim A method for producing high purity silicon.
The method of claim 20.
https://www.w3.org/2000/01/rdf-schema#label US patent 5,021,986
gptkbp:internationalClassification H01L 21/00
C30B 29/00
gptkbp:inventor gptkb:Robert_J._McCarthy
gptkbp:issuedOn June 4, 1991
gptkbp:legalStatus active
gptkbp:numberOfClaims 20
gptkbp:numberOfFigures 5
gptkbp:patentFamily US_patent_family_5,021,986.
gptkbp:patentOffice United_States_Patent_and_Trademark_Office.
gptkbp:patentType granted
gptkbp:priorityDate March 30, 1989
gptkbp:relatedTo chemical vapor deposition
high purity materials
silicon production
gptkbp:title Method for producing a high purity silicon