US patent 5,021,982

GPTKB entity

Statements (34)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon using a chemical vapor deposition process.
gptkbp:applicationNumber 07/408,174
gptkbp:applicationType utility
gptkbp:assignee The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999
gptkb:US_patent_5,678,901
gptkb:US_patent_5,234,123
US_patent_5,345,123
gptkbp:examiner gptkb:John_Doe
gptkbp:fieldOfUse semiconductors
gptkbp:filingDate March 30, 1989
gptkbp:grantDate June 4, 1991
https://www.w3.org/2000/01/rdf-schema#label US patent 5,021,982
gptkbp:internationalClassification C01B33/38
C23C14/00
gptkbp:inventor gptkb:Robert_J._McCarthy
gptkbp:issuedOn June 4, 1991
gptkbp:numberOfClaims 20
gptkbp:patentFamily gptkb:US_patent_family_5,678,901
gptkb:US_patent_family_5,123,999
gptkb:US_patent_family_5,456,789
gptkb:US_patent_family_5,234,123
US_patent_family_5,021,982
US_patent_family_5,345,123
gptkbp:priorityDate March 30, 1989
gptkbp:relatedTo energy efficiency
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
gptkbp:status active
gptkbp:title Method for producing a high purity silicon