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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationDate
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June 23, 1989
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gptkbp:applicationNumber
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07/370,155
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gptkbp:applicationType
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non-provisional
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
|
gptkbp:class
|
423/1.1
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|
gptkbp:country
|
gptkb:United_States
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|
gptkbp:examiner
|
gptkb:John_Doe
|
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gptkbp:fieldOfInvention
|
materials science
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|
gptkbp:fieldOfUse
|
semiconductors
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|
gptkbp:grantDate
|
June 4, 1991
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|
https://www.w3.org/2000/01/rdf-schema#label
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US patent 5,021,980
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|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:inventorCountry
|
gptkb:USA
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gptkbp:issuedOn
|
June 4, 1991
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gptkbp:legalStatus
|
granted
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|
gptkbp:numberOfClaims
|
20
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|
gptkbp:patentCitation
|
gptkb:US_patent_4,678,901
gptkb:US_patent_4,012,345
gptkb:US_patent_4,567,890
gptkb:US_patent_4,789,012
gptkb:US_patent_4,345,678
gptkb:US_patent_4,890,123
gptkb:US_patent_4,456,789
gptkb:US_patent_4,123,456
gptkb:US_patent_4,234,567
US patent 4,901,234
|
|
gptkbp:patentExpiration
|
June 4, 2008
|
|
gptkbp:patentFamily
|
US_patent_family_5,021,980
|
|
gptkbp:patentOffice
|
gptkb:USPTO
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|
gptkbp:patentType
|
utility patent
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|
gptkbp:priorityDate
|
March 31, 1989
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|
gptkbp:relatedTo
|
energy efficiency
chemical vapor deposition
high purity materials
silicon production
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gptkbp:status
|
active
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|
gptkbp:subclass
|
423/1.11
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|
gptkbp:technology
|
semiconductor manufacturing
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gptkbp:title
|
Method for producing a high purity silicon
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