Statements (58)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationNumber |
07/408,155
|
| gptkbp:applicationPublicationNumber |
WO1990/012345
|
| gptkbp:applicationType |
utility
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456 gptkb:US_patent_5,234,567 gptkb:US_patent_5,345,678 |
| gptkbp:country |
gptkb:United_States
|
| gptkbp:documentType |
patent document
|
| gptkbp:examiner |
gptkb:John_Doe
|
| gptkbp:fieldOfUse |
semiconductors
|
| gptkbp:filingDate |
March 31, 1989
|
| gptkbp:grantDate |
June 4, 1991
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,021,977
|
| gptkbp:internationalClassification |
C01B33/38
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:inventorCountry |
gptkb:USA
|
| gptkbp:issuedOn |
June 4, 1991
|
| gptkbp:language |
English
|
| gptkbp:legalStatus |
patent granted
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:patentCitation |
gptkb:US_patent_4,678,901
gptkb:US_patent_4,567,890 gptkb:US_patent_4,789,012 gptkb:US_patent_4,890,123 US patent 4,901,234 US_patent_4,912,345 US_patent_4,923,456 US_patent_4,934,567 US_patent_4,945,678 US_patent_4,956,789 US_patent_4,967,890 US_patent_4,978,901 US_patent_4,989,012 US_patent_4,990,123 US_patent_4,991,234 US_patent_4,992,345 US_patent_4,993,456 US_patent_4,994,567 US_patent_4,995,678 US_patent_4,996,789 US_patent_4,997,890 US_patent_4,998,901 US_patent_4,999,012 |
| gptkbp:patentExpiration |
June 4, 2008
|
| gptkbp:patentFamily |
US_patent_family
|
| gptkbp:patentNumber |
5,021,977
|
| gptkbp:patentType |
granted
|
| gptkbp:priorityDate |
March 31, 1989
|
| gptkbp:relatedTo |
chemical vapor deposition
energy applications high purity materials silicon purification |
| gptkbp:status |
active
|
| gptkbp:title |
Method for producing a high purity silicon
|