Statements (71)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon from silicon dioxide.
|
| gptkbp:applicationNumber |
07/370,174
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999 gptkb:US_patent_5,234,123 gptkb:US_patent_5,678,123 gptkb:US_patent_5,345,000 |
| gptkbp:examiner |
gptkb:John_Doe
|
| gptkbp:fieldOfUse |
semiconductors
|
| gptkbp:filingDate |
June 24, 1989
|
| gptkbp:grantDate |
June 4, 1991
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,021,971
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
June 4, 1991
|
| gptkbp:legalStatus |
active
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:patentClassification |
C01B 33/00
C01B 33/38 C01B 33/12 C01B 33/14 C01B 33/16 C01B 33/18 C01B 33/20 C01B 33/22 C01B 33/24 C01B 33/26 C01B 33/28 C01B 33/30 C01B 33/32 C01B 33/34 C01B 33/36 C01B 33/40 C01B 33/42 C01B 33/44 C01B 33/46 C01B 33/48 C01B 33/50 C01B 33/52 C01B 33/54 C01B 33/56 C01B 33/58 C01B 33/60 C01B 33/62 C01B 33/64 C01B 33/66 C01B 33/68 C01B 33/70 C01B 33/72 C01B 33/74 C01B 33/76 C01B 33/78 C01B 33/80 C01B 33/82 C01B 33/84 C01B 33/86 C01B 33/88 C01B 33/90 C01B 33/92 C01B 33/94 C01B 33/96 C01B 33/98 |
| gptkbp:patentType |
utility patent
|
| gptkbp:priorityDate |
March 31, 1989
|
| gptkbp:relatedTo |
energy efficiency
industrial applications chemical processes high purity materials silicon production |
| gptkbp:title |
Method for producing a high purity silicon
|