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gptkbp:instanceOf
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patent
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gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
|
07/370,174
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gptkbp:applicationType
|
Utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_5,123,456
gptkb:US_patent_5,678,910
|
|
gptkbp:country
|
gptkb:United_States
|
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gptkbp:currentStatus
|
Expired
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gptkbp:documentType
|
patent document
|
|
gptkbp:examiner
|
gptkb:John_Doe
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
|
June 24, 1989
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gptkbp:fullText
|
Yes
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,021,964
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gptkbp:internationalClassification
|
C30B 29/00
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|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:inventorCountry
|
gptkb:United_States
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gptkbp:issuedOn
|
June 4, 1991
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gptkbp:language
|
English
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gptkbp:legalStatus
|
lapsed
|
|
gptkbp:numberOfClaims
|
20
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|
gptkbp:numberOfFigures
|
5
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|
gptkbp:patentCitation
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890
gptkb:US_patent_5,890,123
gptkb:US_patent_5,678,901
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,678,910
gptkb:US_patent_5,000,000
gptkb:US_patent_5,012,345
gptkb:US_patent_4,567,890
gptkb:US_patent_5,345,678
gptkb:US_patent_5,789,012
gptkb:US_patent_4,123,456
US patent 5,901,234
|
|
gptkbp:patentExpiration
|
June 4, 2008
|
|
gptkbp:patentFamily
|
US_patent_family
|
|
gptkbp:patentNumber
|
5,021,964
|
|
gptkbp:patentOffice
|
gptkb:USPTO
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|
gptkbp:patentType
|
granted
|
|
gptkbp:priorityDate
|
March 31, 1989
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|
gptkbp:relatedTo
|
chemical vapor deposition
silicon production
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|
gptkbp:title
|
Method for producing a high purity silicon
|
|
gptkbp:USClassification
|
423/1.1
|