Statements (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon from silicon dioxide.
|
| gptkbp:applicationNumber |
07/370,174
|
| gptkbp:applicationType |
utility
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999 gptkb:US_patent_5,234,123 gptkb:US_patent_5,345,000 |
| gptkbp:documentType |
patent document
|
| gptkbp:examiner |
gptkb:John_Doe
|
| gptkbp:fieldOfUse |
semiconductors
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,021,962
|
| gptkbp:internationalClassification |
C01B33/38
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
June 4, 1991
|
| gptkbp:legalStatus |
granted
|
| gptkbp:location |
gptkb:United_States
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:patentFamily |
US_patent_family_5,021,962
|
| gptkbp:priorityDate |
March 31, 1989
|
| gptkbp:relatedTo |
silicon production technology
|
| gptkbp:status |
expired
|
| gptkbp:title |
Method for producing a high purity silicon
|