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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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07/370,052
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gptkbp:applicationType
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utility
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gptkbp:assignee
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The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:assigneeCountry
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gptkb:USA
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gptkbp:citedBy
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gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
|
gptkbp:classification
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H01L 21/00
C01B 33/00
C30B 29/00
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gptkbp:country
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gptkb:United_States
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gptkbp:examiner
|
gptkb:John_Doe
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gptkbp:expirationDate
|
June 4, 2011
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filingDate
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June 24, 1989
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gptkbp:firstClaim
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A method for producing high purity silicon.
A method as claimed in claim 20.
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gptkbp:grantDate
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June 4, 1991
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https://www.w3.org/2000/01/rdf-schema#label
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US patent 5,021,950
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:inventorCountry
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gptkb:USA
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gptkbp:issuedOn
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June 4, 1991
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gptkbp:language
|
English
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gptkbp:legalStatus
|
active
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gptkbp:maintenanceFee
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Yes
required
June 4, 2001
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gptkbp:numberOfClaims
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20
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gptkbp:patentFamily
|
US_patent_family
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gptkbp:patentLength
|
20 years
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gptkbp:patentOffice
|
gptkb:USPTO
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gptkbp:patentStatus
|
expired
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gptkbp:patentType
|
granted
utility patent
granted patent
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gptkbp:priorityDate
|
March 31, 1989
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gptkbp:relatedPatent
|
gptkb:US_patent_5,200,000
gptkb:US_patent_5,300,000
gptkb:US_patent_5,400,000
gptkb:US_patent_5,000,000
gptkb:US_patent_5,100,000
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gptkbp:relatedTo
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energy efficiency
semiconductor manufacturing
chemical vapor deposition
high purity materials
silicon purification
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gptkbp:title
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Method for producing a high purity silicon
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