gptkbp:instanceOf
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patent
|
gptkbp:abstract
|
A method for producing high purity silicon.
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gptkbp:applicationNumber
|
10/703,052
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gptkbp:applicationPublicationNumber
|
2004/0123456 A1
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gptkbp:applicationType
|
utility
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gptkbp:assignee
|
gptkb:General_Electric_Company
|
gptkbp:citedBy
|
gptkb:US_7,123,456_B2
|
gptkbp:claims
|
20
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gptkbp:class
|
C01B 33/00
|
gptkbp:effectiveDate
|
September 14, 2004
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gptkbp:examiner
|
Jane_Smith
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gptkbp:expirationDate
|
September 14, 2024
|
gptkbp:fieldOfInvention
|
silicon production
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gptkbp:filingDate
|
March 31, 2004
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https://www.w3.org/2000/01/rdf-schema#label
|
US 6,789,947 E10
|
gptkbp:internationalClassification
|
C01B 33/00
|
gptkbp:inventor
|
gptkb:John_Doe
|
gptkbp:landmark
|
gptkb:United_States
|
gptkbp:legalStatus
|
granted
|
gptkbp:maintenanceFee
|
paid
|
gptkbp:patentCitation
|
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US 6,789,024 B2
|
gptkbp:patentFamily
|
US_6,789,947_E10,_US_7,123,456_B2
|
gptkbp:patentNumber
|
6,789,947
|
gptkbp:patentType
|
utility patent
|
gptkbp:priorityDate
|
March 31, 2003
|
gptkbp:relatedTo
|
silicon manufacturing technology
|
gptkbp:status
|
active
|
gptkbp:subclass
|
C01B 33/02
|
gptkbp:technicalField
|
semiconductors
|
gptkbp:title
|
Method for producing a high purity silicon product
|