Statements (53)
Predicate | Object |
---|---|
gptkbp:instanceOf |
patent
|
gptkbp:covers |
semiconductor technology
|
gptkbp:hasAbstract |
This invention relates to a method for enhancing the performance of semiconductor devices.
|
gptkbp:hasApplicationNumber |
US_11/123,456
|
gptkbp:hasAssignee |
gptkb:Tech_Innovations_LLC
|
gptkbp:hasCitations |
gptkb:US_3456789_C1
gptkb:US_1234567_A gptkb:US_2345678_B2 |
gptkbp:hasClaim |
20
|
gptkbp:hasDescription |
A method to improve the efficiency of semiconductor devices.
|
gptkbp:hasExaminer |
Jane_Smith
|
gptkbp:hasFieldOfUse |
telecommunications
consumer electronics electronics computing |
gptkbp:hasFilingDate |
2005-12-15
|
gptkbp:hasImpactOn |
better thermal management
improved reliability better electrical conductivity reduced power consumption enhanced performance metrics improved signal integrity improved scalability enhanced thermal stability enhanced integration density improved device longevity increased switching speed increased yield in production lower defect rates reduced manufacturing costs wider operational temperature range |
gptkbp:hasInternationalClassification |
H01L 21/00
|
gptkbp:hasInventor |
gptkb:Alice_Johnson
gptkb:John_Doe |
gptkbp:hasLegalStatus |
active
|
gptkbp:hasPriorityDate |
2004-12-15
|
gptkbp:hasPublications |
C1
2006-06-22 |
gptkbp:hasResearchInterest |
chemical vapor deposition
|
gptkbp:hasTechnicalField |
material science
|
gptkbp:hasTechnology |
increased performance
|
gptkbp:hasTitle |
Method for enhancing the performance of a semiconductor device
|
gptkbp:hasTouristAttraction |
silicon
gallium arsenide germanium |
https://www.w3.org/2000/01/rdf-schema#label |
US 0246802468 C1
|
gptkbp:isCitedBy |
US_0246802469_C1
US_0246802470_C1 |
gptkbp:isFiledIn |
gptkb:United_States
|
gptkbp:isGranted |
true
|
gptkbp:isPartOf |
semiconductor device patents
|
gptkbp:isPublishedIn |
USPTO database
|
gptkbp:isRelatedTo |
US_0246802467_C1
|