US 0246802468 C1

GPTKB entity

Statements (53)
Predicate Object
gptkbp:instanceOf patent
gptkbp:covers semiconductor technology
gptkbp:hasAbstract This invention relates to a method for enhancing the performance of semiconductor devices.
gptkbp:hasApplicationNumber US_11/123,456
gptkbp:hasAssignee gptkb:Tech_Innovations_LLC
gptkbp:hasCitations gptkb:US_3456789_C1
gptkb:US_1234567_A
gptkb:US_2345678_B2
gptkbp:hasClaim 20
gptkbp:hasDescription A method to improve the efficiency of semiconductor devices.
gptkbp:hasExaminer Jane_Smith
gptkbp:hasFieldOfUse telecommunications
consumer electronics
electronics
computing
gptkbp:hasFilingDate 2005-12-15
gptkbp:hasImpactOn better thermal management
improved reliability
better electrical conductivity
reduced power consumption
enhanced performance metrics
improved signal integrity
improved scalability
enhanced thermal stability
enhanced integration density
improved device longevity
increased switching speed
increased yield in production
lower defect rates
reduced manufacturing costs
wider operational temperature range
gptkbp:hasInternationalClassification H01L 21/00
gptkbp:hasInventor gptkb:Alice_Johnson
gptkb:John_Doe
gptkbp:hasLegalStatus active
gptkbp:hasPriorityDate 2004-12-15
gptkbp:hasPublications C1
2006-06-22
gptkbp:hasResearchInterest chemical vapor deposition
gptkbp:hasTechnicalField material science
gptkbp:hasTechnology increased performance
gptkbp:hasTitle Method for enhancing the performance of a semiconductor device
gptkbp:hasTouristAttraction silicon
gallium arsenide
germanium
https://www.w3.org/2000/01/rdf-schema#label US 0246802468 C1
gptkbp:isCitedBy US_0246802469_C1
US_0246802470_C1
gptkbp:isFiledIn gptkb:United_States
gptkbp:isGranted true
gptkbp:isPartOf semiconductor device patents
gptkbp:isPublishedIn USPTO database
gptkbp:isRelatedTo US_0246802467_C1