Statements (55)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:memory
|
| gptkbp:benefits |
Limited Write Cycles
Higher Storage Capacity |
| gptkbp:characteristic |
High Density
Low Power Consumption Fast Read Speed Slow Write Speed |
| gptkbp:developed_by |
gptkb:Toshiba
gptkb:San_Disk |
| gptkbp:form_factor |
gptkb:2_D_NAND
3 D NAND |
| gptkbp:has_type |
Non-volatile Memory
|
| https://www.w3.org/2000/01/rdf-schema#label |
NAND Flash Memory
|
| gptkbp:is_based_on |
gptkb:Floating_Gate_Transistor
|
| gptkbp:is_compared_to |
gptkb:NOR_Flash_Memory
|
| gptkbp:is_part_of |
gptkb:mobile_devices
gptkb:Consumer_Electronics gptkb:Data gptkb:cloud_storage gptkb:memory gptkb:security Data Storage Solutions Memory Hierarchy Digital Storage Media Data Transfer Technology Computing Devices Data Processing Technology Non-volatile Storage Data Integrity Technology Data Retention Technology |
| gptkbp:is_subject_to |
Error Correction Codes
Data Retention Issues Bad Block Management Wear Leveling Techniques |
| gptkbp:is_used_in |
gptkb:Embedded_Systems
gptkb:smartphone gptkb:camera Laptops Tablets Data Centers Industrial Applications Solid State Drives Wearable Devices Automotive Applications Cloud Storage Solutions Game Consoles Memory Cards USB Flash Drives Io T Devices |
| gptkbp:manufacturer |
gptkb:Samsung
gptkb:SK_Hynix gptkb:Micron_Technology |
| gptkbp:bfsParent |
gptkb:Intel
gptkb:cloud_storage |
| gptkbp:bfsLayer |
4
|