Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:Company
|
| gptkbp:application |
power amplifiers
photodetectors RF amplifiers high-speed transistors |
| gptkbp:challenges |
scalability
market competition cost of production material defects |
| gptkbp:characterized_by |
high electron mobility
direct bandgap |
| gptkbp:composed_of |
elements from group III
elements from group V |
| gptkbp:developed_by |
gptkb:Telecommunications
consumer electronics military applications satellite communications |
| gptkbp:example |
Aluminum Gallium Arsenide (Al Ga As)
Gallium Arsenide (Ga As) Gallium Nitride (Ga N) Indium Gallium Arsenide (In Ga As) Indium Phosphide (In P) |
| gptkbp:has_property |
low noise
high breakdown voltage high thermal stability good thermal conductivity |
| https://www.w3.org/2000/01/rdf-schema#label |
III-V Semiconductors
|
| gptkbp:known_for |
high performance
high efficiency low thermal conductivity wide bandgap materials |
| gptkbp:manufacturer |
gptkb:MBE
MOCVD |
| gptkbp:research_areas |
gptkb:quantum_computing
photonics spintronics nanoelectronics |
| gptkbp:supply_chain |
testing and validation
raw materials wafer fabrication device packaging |
| gptkbp:trends |
increased efficiency
miniaturization of devices advancements in material science integration with silicon |
| gptkbp:used_in |
gptkb:LED
optical devices laser diodes solar cells high-frequency electronics |
| gptkbp:bfsParent |
gptkb:Photonic_Integrated_Circuits
|
| gptkbp:bfsLayer |
7
|