Fin FET transistors

GPTKB entity

Statements (60)
Predicate Object
gptkbp:instance_of gptkb:Company
gptkbp:bfsLayer 6
gptkbp:bfsParent gptkb:Intel's_10nm_Super_Fin_technology
gptkb:Intel_10_process_technology
gptkb:Intel_10nm_Super_Fin_technology
gptkbp:allows higher operating frequencies
gptkbp:benefits increased performance
reduced power consumption
gptkbp:developed_by gptkb:Intel
gptkbp:enables higher transistor density
high-density integration
high-performance graphics processing
multi-gate transistor technology
gptkbp:enhances signal integrity
data processing speed
electrical control over the channel
gptkbp:features three-dimensional structure
gptkbp:first_introduced gptkb:2011
https://www.w3.org/2000/01/rdf-schema#label Fin FET transistors
gptkbp:impact gptkb:Moore's_Law
future semiconductor technologies
gptkbp:improves energy efficiency
overall system performance
thermal performance
device reliability
device performance metrics
scalability of transistors
gptkbp:influence circuit design
gptkbp:is_adopted_by 7nm technology node
14nm technology node
10nm technology node
major semiconductor manufacturers
22nm technology node
5nm technology node
gptkbp:is_characterized_by fin structure
gptkbp:is_compared_to planar transistors
gptkbp:is_designed_to minimize power loss
gptkbp:is_integrated_with other semiconductor devices
gptkbp:is_often_used_in high-performance computing
gptkbp:is_used_for low-power applications
high-speed applications
gptkbp:manufacturer advanced lithography techniques
gptkbp:reduces leakage current
short-channel effects
manufacturing costs
power supply voltage
gptkbp:requires advanced fabrication techniques
gptkbp:supports machine learning applications
AI applications
quantum computing research
3 DIC technology
smaller node sizes
gptkbp:technology gptkb:Company
gptkbp:used_in gptkb:smartphone
automotive applications
consumer electronics
data centers
integrated circuits
FPGA designs
ASIC designs