Statements (60)
Predicate | Object |
---|---|
gptkbp:instance_of |
gptkb:Company
|
gptkbp:bfsLayer |
6
|
gptkbp:bfsParent |
gptkb:Intel's_10nm_Super_Fin_technology
gptkb:Intel_10_process_technology gptkb:Intel_10nm_Super_Fin_technology |
gptkbp:allows |
higher operating frequencies
|
gptkbp:benefits |
increased performance
reduced power consumption |
gptkbp:developed_by |
gptkb:Intel
|
gptkbp:enables |
higher transistor density
high-density integration high-performance graphics processing multi-gate transistor technology |
gptkbp:enhances |
signal integrity
data processing speed electrical control over the channel |
gptkbp:features |
three-dimensional structure
|
gptkbp:first_introduced |
gptkb:2011
|
https://www.w3.org/2000/01/rdf-schema#label |
Fin FET transistors
|
gptkbp:impact |
gptkb:Moore's_Law
future semiconductor technologies |
gptkbp:improves |
energy efficiency
overall system performance thermal performance device reliability device performance metrics scalability of transistors |
gptkbp:influence |
circuit design
|
gptkbp:is_adopted_by |
7nm technology node
14nm technology node 10nm technology node major semiconductor manufacturers 22nm technology node 5nm technology node |
gptkbp:is_characterized_by |
fin structure
|
gptkbp:is_compared_to |
planar transistors
|
gptkbp:is_designed_to |
minimize power loss
|
gptkbp:is_integrated_with |
other semiconductor devices
|
gptkbp:is_often_used_in |
high-performance computing
|
gptkbp:is_used_for |
low-power applications
high-speed applications |
gptkbp:manufacturer |
advanced lithography techniques
|
gptkbp:reduces |
leakage current
short-channel effects manufacturing costs power supply voltage |
gptkbp:requires |
advanced fabrication techniques
|
gptkbp:supports |
machine learning applications
AI applications quantum computing research 3 DIC technology smaller node sizes |
gptkbp:technology |
gptkb:Company
|
gptkbp:used_in |
gptkb:smartphone
automotive applications consumer electronics data centers integrated circuits FPGA designs ASIC designs |