Mott variable-range hopping

E111762

Mott variable-range hopping is a theoretical model in condensed matter physics that describes how electrons move through disordered materials at low temperatures via thermally activated tunneling between localized states over variable distances.

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Predicate Object
instanceOf electronic conduction mechanism
theoretical model in condensed matter physics
transport model
appliesTo Anderson-localized systems
amorphous semiconductors
disordered materials
doped semiconductors
glassy materials
strongly disordered insulators
assumes finite density of localized states at the Fermi level
non-interacting or weakly interacting electrons
concerns insulating side of the metal–insulator transition
contrastsWith band conduction
nearest-neighbor hopping
dependsOn degree of disorder
density of states at the Fermi level
localization length of electronic wavefunctions
describes electron transport in disordered systems
thermally activated tunneling between localized states
developedBy Nevill Mott
surface form: Nevill Francis Mott
differsFrom Efros–Shklovskii variable-range hopping by neglecting Coulomb gap
explains non-Arrhenius temperature dependence of resistivity in disordered insulators
field condensed matter physics
mesoscopic physics
hasParameter characteristic temperature T0
spatial dimension d
involves hopping conduction
localized electronic states
phonon-assisted tunneling
variable energy difference between localized states
variable hopping distance
mathematicalForm σ(T) = σ0 · exp[-(T0/T)^{1/(d+1)}]
namedAfter Nevill Mott
surface form: Nevill Francis Mott
predicts conductivity proportional to exp[-(T0/T)^{1/(d+1)}]
stretched-exponential temperature dependence of conductivity
relatedTo Anderson localization
Efros–Shklovskii variable-range hopping
Mott insulator
relevantAt low temperatures
temperatureDependenceExponent 1/2 in one dimension
1/3 in two dimensions
1/4 in three dimensions
usedFor analyzing transport in doped semiconductors near the metal-insulator transition
interpreting low-temperature conductivity data
modeling conduction in amorphous silicon
modeling conduction in organic semiconductors
validWhen electrons are localized rather than extended
thermal energy is small compared to typical disorder energy scale

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Referenced by (4)

Full triples — surface form annotated when it differs from this entity's canonical label.

Nevill Mott knownFor Mott variable-range hopping
Nevill notableConcept Mott variable-range hopping
subject surface form: Nevill Francis Mott
Electronic Processes in Non-Crystalline Materials describedConcept Mott variable-range hopping
this entity surface form: Mott variable-range hopping law
Mott knownFor Mott variable-range hopping
subject surface form: Nevill Francis Mott