Statements (62)
Predicate | Object |
---|---|
gptkbp:instance_of |
gptkb:lithography
|
gptkbp:developed_by |
gptkb:ASML
|
gptkbp:employs |
deep ultraviolet light
|
gptkbp:enhances |
wafer yield
|
gptkbp:first_introduced |
gptkb:1980s
|
gptkbp:frequency |
200-300 nm
|
gptkbp:has |
high numerical aperture
|
https://www.w3.org/2000/01/rdf-schema#label |
DUV lithography machines
|
gptkbp:integrates_with |
photoresist materials
|
gptkbp:is |
a focus of research and development
a mature technology subject to technological advancements influenced by market demand widely adopted in the industry part of the semiconductor supply chain a technology that is vital for consumer electronics a critical tool for chipmakers a key enabler of high-performance computing a key technology in Moore's Law a part of the lithography ecosystem a standard in the semiconductor industry a subject of international competition a subject of patent filings a technology that drives innovation in electronics a technology that evolves with industry needs a technology that faces challenges from EUV a technology that has a global market presence a technology that impacts device scaling a technology that influences semiconductor pricing a technology that is critical for 5 G applications a technology that is essential for Io T devices a technology that is integral to mobile devices a technology that requires continuous improvement a technology that requires skilled operators a technology that supports automotive electronics a technology that supports diverse applications a technology with a long lifecycle a technology with high capital costs cost-effective for certain applications essential for photomask production integrated into lithography clusters less effective for sub-7nm nodes used in mass production used in various semiconductor fabs a technology that is used in high-volume manufacturing. |
gptkbp:is_a_key_component_of |
photolithography process
|
gptkbp:is_capable_of |
producing features below 100 nm
|
gptkbp:is_critical_for |
IC fabrication
|
gptkbp:marketed_as |
gptkb:Nikon
gptkb:cannon |
gptkbp:operates_in |
high vacuum conditions
|
gptkbp:operates_under |
high throughput
|
gptkbp:requires |
cleanroom environment
high precision optics extensive maintenance |
gptkbp:successor |
EUV lithography machines
|
gptkbp:supports |
multiple patterning techniques
|
gptkbp:used_for |
gptkb:Company
|
gptkbp:used_in |
advanced node technology
|
gptkbp:utilizes |
masking technology
|
gptkbp:bfsParent |
gptkb:ASML_Holding
|
gptkbp:bfsLayer |
6
|