Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical compound
|
| gptkbp:appearance |
black solid
|
| gptkbp:application |
LEDs
laser diodes high-temperature electronics |
| gptkbp:challenges |
7.5 on Mohs scale
|
| gptkbp:chemicalFormula |
gptkb:BP
chemically stable under normal conditions |
| gptkbp:climate |
stable at high temperatures
|
| gptkbp:colors |
black
|
| gptkbp:composedOf |
reaction of boron and phosphorus
|
| gptkbp:conducts |
direct band gap
|
| gptkbp:constructionMaterial |
2.0 eV
|
| gptkbp:coolingSystem |
5.5 × 10⁻⁶ K⁻¹
|
| gptkbp:decommissioningDate |
above 1,500 °C
|
| gptkbp:dissolved |
insoluble in water
|
| gptkbp:distribution |
2.52 g/cm³
|
| gptkbp:electronicSystems |
high electron mobility
non-magnetic complex band structure |
| gptkbp:environmentalImpact |
low toxicity
low environmental impact n-type semiconductor 100 W/m·K |
| gptkbp:financial_aid |
thermally stable
|
| gptkbp:growthRate |
can be grown by chemical vapor deposition
|
| gptkbp:hasFacilities |
44.81 g/mol
|
| https://www.w3.org/2000/01/rdf-schema#label |
BoronPhosphide
|
| gptkbp:iceClass |
2,500 °C
3,000 °C |
| gptkbp:isATypeOf |
12045-43-5
|
| gptkbp:lighting |
exhibits photoluminescence
transparent in infrared |
| gptkbp:lightRange |
used in photonic devices
|
| gptkbp:market |
commercially available
varies by supplier |
| gptkbp:orbitalInclination |
0.5 eV
|
| gptkbp:origin |
boron phosphide
|
| gptkbp:patentCitation |
patents filed for applications
|
| gptkbp:photography |
exhibits photoelectric effect
|
| gptkbp:productionCompany |
high synthesis temperature
|
| gptkbp:researchField |
materials science
|
| gptkbp:researchInterest |
studied in various research institutions
used in semiconductor research |
| gptkbp:rootSystem |
cubic
zinc blende |
| gptkbp:safetyFeatures |
handle with care
MSDS available |
| gptkbp:sport |
can be doped with nitrogen
|
| gptkbp:storage |
store in a cool, dry place
|
| gptkbp:surface |
high surface area
|
| gptkbp:uses |
semiconductor applications
|