Statements (55)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
silicon carbide
|
| gptkbp:hasGoals |
3.0 eV
|
| gptkbp:hasProductLine |
chemical vapor deposition
sublimation method |
| gptkbp:hasRelatedPatent |
LEDs
|
| gptkbp:hasStudentOrganizations |
hexagonal
|
| gptkbp:hasSubsidiary |
trigonal
|
| https://www.w3.org/2000/01/rdf-schema#label |
6H-SiC
|
| gptkbp:isA |
wide bandgap semiconductor
|
| gptkbp:isAvenueFor |
environmental impact
thermal management |
| gptkbp:isCharacterizedBy |
high breakdown voltage
high thermal stability high breakdown field strength |
| gptkbp:isCompatibleWith |
silicon technology
|
| gptkbp:isConsidered |
an alternative to silicon
|
| gptkbp:isEvaluatedBy |
cost-effectiveness
device reliability power conversion efficiency |
| gptkbp:isExaminedBy |
electronic packaging
|
| gptkbp:isKnownFor |
high thermal conductivity
chemical stability low thermal expansion high electron mobility low defect density high power density |
| gptkbp:isPartOf |
advanced materials
electronic materials next-generation electronics semiconductor technology. |
| gptkbp:isStudiedIn |
energy efficiency
electronic properties high-temperature applications high voltage applications radiation resistance |
| gptkbp:isSuitableFor |
natural resources
synthetic processes |
| gptkbp:isUsedIn |
industrial applications
medical devices semiconductors power electronics power amplifiers high-power devices solar cells defense applications |
| gptkbp:isUtilizedFor |
research studies
thermal conductivity high-frequency performance |
| gptkbp:isUtilizedIn |
telecommunications
aerospace applications high-frequency devices |
| gptkbp:isVisitedBy |
automotive applications
various semiconductor companies energy applications high-performance devices |