Statements (61)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
silicon carbide
|
| gptkbp:hasGoals |
3.26 eV
|
| gptkbp:hasProductLine |
chemical vapor deposition
|
| gptkbp:hasRelatedPatent |
high-temperature devices
|
| gptkbp:hasSpecialty |
hexagonal
|
| https://www.w3.org/2000/01/rdf-schema#label |
4H-SiC
|
| gptkbp:isA |
semiconductor material
|
| gptkbp:isAvenueFor |
thermal management
|
| gptkbp:isCharacterizedBy |
high breakdown voltage
high thermal stability high power density high breakdown electric field |
| gptkbp:isCompatibleWith |
silicon technology
|
| gptkbp:isConsidered |
electric vehicle components
|
| gptkbp:isExploredIn |
gptkb:quantum_computing
|
| gptkbp:isFundedBy |
various semiconductor companies
|
| gptkbp:isKnownFor |
high reliability
high thermal conductivity high efficiency high electron mobility low thermal expansion coefficient low on-resistance |
| gptkbp:isPartOf |
gptkb:GaN
advanced materials wide bandgap semiconductors 3C-SiC next-generation electronics silicon carbide variants traditional semiconductors |
| gptkbp:isStudiedIn |
energy efficiency
space applications grid applications power device applications high-power transistors |
| gptkbp:isSuitableFor |
natural resources
|
| gptkbp:isUsedIn |
industrial applications
medical devices sensors renewable energy systems aerospace applications power electronics high-frequency applications telecommunication devices RF devices |
| gptkbp:isUtilizedFor |
battery technology
high-voltage applications nuclear applications |
| gptkbp:isUtilizedIn |
research studies
consumer electronics military applications photovoltaic systems smart devices automotive electronics environmental applications energy systems |
| gptkbp:isVisitedBy |
telecommunications
data centers smart grid technology LED technology power amplifiers silicon in certain applications |